LARGE AREA THIN FILM
PROCESSOR
PROCESSOR
LVPP PLASMA PROCESSOR
The LVPP plasma processor combines the controllability
associated with ECR and RF plasmas with the feedstock
flexibility of magnetron sputtered or pulsed laser
deposition with the high deposition rates typical of
plasma guns and vacuum arc plasmas.
The LVPP plasma processor combines the controllability
associated with ECR and RF plasmas with the feedstock
flexibility of magnetron sputtered or pulsed laser
deposition with the high deposition rates typical of
plasma guns and vacuum arc plasmas.
TABLE TOP SIZE
PROTOTYPE
A prototype fab line sized version has been designed.
The system uses resistive plasma heating in a toroidal geometry to produce an initial plasma called a
"process" plasma with number densities up to 5 x 10^14/cm^3, temperatures up to 1000 EV, major radius of 20
cm and minor radius of 5 cm. These plasma conditions are robust and can ablate, dissociate and ionize solids,
liquids or gases of any feedstock material to produce a plasma "product" plasma with number densities of up
to 5 x 10^16/cm^3 and a temperature of about 5 to 10 EV. This "product" plasma is guided by magnetic fields
into a target chamber. Applied to a target with dimensions of 200 cm by 200 cm a typical unit is predicted to
have a deposition rate of between 600 and 2400 monolayers per minute for materials such as Cu or Al2O3.
Present thin film techniques have costly multiple step processes to develop complex films. A sequence of
layers can be applied with the LVPP by injecting a series of different types and sizes of pellets into the toroidal
plasma. The layers on the thin film will have thicknesses determined by the size of the pellets. The species laid
down on the thin film are stoichiometrically the same as the pellet. This is particularly important for LED thin
films.
A prototype fab line sized version has been designed.
The system uses resistive plasma heating in a toroidal geometry to produce an initial plasma called a
"process" plasma with number densities up to 5 x 10^14/cm^3, temperatures up to 1000 EV, major radius of 20
cm and minor radius of 5 cm. These plasma conditions are robust and can ablate, dissociate and ionize solids,
liquids or gases of any feedstock material to produce a plasma "product" plasma with number densities of up
to 5 x 10^16/cm^3 and a temperature of about 5 to 10 EV. This "product" plasma is guided by magnetic fields
into a target chamber. Applied to a target with dimensions of 200 cm by 200 cm a typical unit is predicted to
have a deposition rate of between 600 and 2400 monolayers per minute for materials such as Cu or Al2O3.
Present thin film techniques have costly multiple step processes to develop complex films. A sequence of
layers can be applied with the LVPP by injecting a series of different types and sizes of pellets into the toroidal
plasma. The layers on the thin film will have thicknesses determined by the size of the pellets. The species laid
down on the thin film are stoichiometrically the same as the pellet. This is particularly important for LED thin
films.